New Products-Power Integrations

NPI Body

650 V Qspeed Silicon Diodes

Replace SiC Parts in AI Servers, Telecom, Networking & Industrial Apps

PI's ultra-fast Qspeed H-Series diodes with 650 V and up to 30 A ratings has industry lowest reverse recovery charge (Qrr) for silicon diodes. A compelling alternative to silicon carbide (SiC) diodes, they deliver efficiency and voltage derating performance.

Power Integrations’ ultra-fast Qspeed H-Series diodes are now available with 650 V and up to 30 A ratings. These high-power devices feature the industry's lowest reverse recovery charge (Qrr) for a silicon diode. They offer a compelling alternative to silicon carbide (SiC) diodes, delivering comparable efficiency and voltage derating performance with the favorable price points and supply assurance of silicon diodes.

Designed to meet the increasing power requirements of modern applications, the new diodes are ideal for continuous conduction mode (CCM) PFC boost applications from 1.6 kW to 11 kW. They readily meet 80% breakdown voltage derating in servers, telecom, networking, and industrial power supplies that use power-hungry CPUs and GPUs.

The 650 V Qspeed diodes offer comparable reverse recovery charge to SiC diodes, resulting in nearly identical system efficiency in a 3.4 kW battery charger application. The merged-PiN Schottky (MPS) diode technology delivers a soft reverse-recovery current characteristic that reduces EMI and peak reverse-voltage stress, eliminating the need for snubbers.

The new Qspeed diodes are housed in industry-standard TO-220AC packages, offering 2.5 kV of isolation and excellent thermal performance. They can be used as drop-in replacements for equivalent SiC diodes.

Features

Si diode pricing with comparable efficiency & voltage derating performance as 650V SiC Schottky diode
Lower conducted and radiated EMI with soft switching
Lower peak reverse voltage stress due to optimized reverse recovery characteristic